| PART |
Description |
Maker |
| DSEP8-06A L182 |
HiPerFRED Epitaxial Diode with soft recovery
Fast Recovery Diodes
HiPerFRED Epitaxial Diode with soft recovery 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| MEK600-04DA |
HiPerFRED Epitaxial Diode dual diode, common cathode 880 A, 400 V, SILICON, RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DSEC60-02AQ |
HiPerFRED Epitaxial Diode
|
IXYS Corporation
|
| DSEC60-03AQ |
HiPerFRED Epitaxial Diode with common cathode and soft recovery 30 A, 300 V, SILICON, RECTIFIER DIODE
|
IXYS, Corp.
IXYS Corporation
|
| DSEP40-03AS |
HiPerFRED Epitaxial Diode with soft recovery
|
IXYS[IXYS Corporation]
|
| DSEC60-12A |
HiPerFRED Epitaxial Diode with common cathode and soft recovery 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247AD
|
IXYS, Corp.
|
| DESC29-06AC |
HiPerFRED Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface HiPerFRED外延二极管ISOPLUS220电隔离背
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DSEP29-12A |
Fast Recovery Diodes
HiPerFRED Epitaxial Diode with soft recovery 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| DSEP60-12A |
Fast Recovery Diodes
HiPerFRED Epitaxial Diode with soft recovery
|
IXYS[IXYS Corporation]
|
| DSEC30-04A |
Fast Recovery Diodes
HiPerFRED Epitaxial Diode with common cathode and soft recovery
|
IXYS Corporation
|
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| IXGN50N60BD2 IXGN50N60BD3 |
HiPerFAST IGBT with HiPerFRED
|
IXYS Corporation
|
